| PART |
Description |
Maker |
| CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1356CV25-166BZXC CY7C1356CV25-166BZC CY7C1356C |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 3.2 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBLArchitecture 256K X 36 ZBT SRAM, 3.5 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| HY29LV400TT90I HY29LV400BT90I |
4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory 4兆位（为512k × 8/256K × 16）低压快闪记忆体
|
Hynix Semiconductor, Inc.
|
| MBM29LV400T MBM29LV400B |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器) 的CMOS 4分（12k × 8/256K × 16Falsh存储器（12k × 8/256K × 16位单5V的电源电压闪速存储器
|
Fujitsu Limited
Fujitsu, Ltd.
|
| CAT64LC20ZS CAT64LC20ZP CAT64LC20J-TE7 CAT64LC20J- |
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
36-Mbit QDR™-II SRAM 2-Word Burst Architecture
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Flow-through SRAM with NoBL™ Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture
SPI Serial EEPROM SPI串行EEPROM
36-Mbit QDR™-II SRAM 2-Word Burst Architecture SPI串行EEPROM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM SPI串行EEPROM
256K (32K x 8) Static RAM SPI串行EEPROM
|
Analog Devices, Inc.
Electronic Theatre Controls, Inc.
|
| CY7C1356C-166BZI CY7C1356C-166BZXI CY7C1356C-166BZ |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 3.2 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBLArchitecture 256K X 36 ZBT SRAM, 2.8 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY14V104NA-BA45XI |
4 Mbit (512K x 8/256K x 16) nvSRAM
|
Cypress
|
| CY14B104L-BA15XI CY14B104L-BA15XIT CY14B104L-BA25X |
4-Mbit (512K x 8/256K x 16) nvSRAM
|
Cypress Semiconductor
http://
|
| CY7C1361C |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
|
Cypress Semiconductor
|
| CY7C1360B-166AC CY7C1360B-166AI CY7C1360B-166AJC C |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM
|
CYPRESS[Cypress Semiconductor]
|
| F49L400BA-90T F49L400UA-70T F49L400UA-90T |
4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory
|
Elite Semiconductor Memory Technology Inc.
|
